copyright@ semipower electronic technology co., ltd. all rights reserved. features high ruggedness r ds( on ) (max 2.3 ? )@v gs =10v gate charge ( typ 18 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . n - channel mosfet absolute maximum ratings symbol parameter value unit v dss drain to source voltage 600 v i d continuous drain current (@t c =25 o c) 4.0 a continuous drain current (@t c =100 o c) 2.2 a i dm drain current pulsed (note 1) 16 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note 2) 220 mj e ar repetitive avalanche energy (note 1) 10.6 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d total power dissipation (@t c =25 o c) 54 w derating factor above 25 o c 0.43 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit min. typ. max. r thjc thermal resistance, junction to case 2.3 o c/w r thja thermal resistance, junction to ambient 110 o c /w mar. 2011. rev. 2.0 1/7 bv dss : 600v i d : 4.0a r ds(on) : 2.3ohm 1 2 3 1. gate 2. drain 3. source 1 2 3 1 2 3 to - 251 to - 252 sw226n samwin item sales type marking package packaging 1 sw i 226n sw226n to - 251 tube 2 sw d 226n sw226n to - 252 reel order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 600 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.6 - v/ o c i dss drain to source leakage current v ds =600v, v gs =0v - - 1 ua v ds =480v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na v gs = - 30v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 2.0a 1.9 2.3 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 571 740 pf c oss output capacitance 70 90 c rss reverse transfer capacitance 18 24 t d(on) turn on delay time v ds =300v, i d =4.0a, r g =25? 21 52 ns tr rising time 46 102 t d(off) turn off delay time 102 214 t f fall time 34 78 q g total gate charge v ds =480v, v gs =10v, i d =4.0a 18 28 nc q gs gate - source charge 3.0 - q gd gate - drain charge 6.0 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 4 a i sm pulsed source current - - 16 a v sd diode forward voltage drop. i s =4.0a, v gs =0v - - 1.4 v t rr reverse recovery time i s =4.0a, v gs =0v, di f /dt=100a/us - 390 - ns q rr breakdown voltage temperature - 1.6 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 25mh, i as = 4.0a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 4.0a, di/dt = 200a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. sw226n samwin 2/7
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non - repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 3/7 sw226n samwin 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 ? ? n o t e s : 1 . 2 5 0 ? s p u l s e t e s t 2. t c = 2 5 ? ? v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v i d , drain current [a] v ds , drain-source voltage [v] 2 3 4 5 6 7 8 9 10 10 -1 10 0 10 1 150 o c 25 o c -55 o c ? ? n o t e s : 1. v ds = 50v 2 . 2 5 0 ? s p u l s e t e s t i d , drain current [a] v gs , gate-source voltage [v] 0 2 4 6 8 10 12 0 1 2 3 4 5 6 v gs = 20v v gs = 10v ? ? n o t e : t j = 2 5 ? ? r ds(on) , d r a i n - s o u r c e o n - r e s i s t a n c e [ ? ] i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 1 5 0 ? ? ? ? n o t e s : 1. v gs = 0v 2 . 2 5 0 ? s p u l s e t e s t 2 5 ? ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 35 0 250 500 750 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd ? ? n o t e s : 1. v gs = 0v 2. f=1mhz c iss c oss c rss capacitance [pf] v ds , drain-source voltage [v] 0 4 8 12 16 20 0 2 4 6 8 10 12 v gs , gate-source voltage [v] v ds = 300v v ds = 480v *. note : i d = 3.9a q g , total gate charge [nc]
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area fig. 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature sw226n samwin 4/7 -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? ? n o t e s : 1. v gs = 0 v 2. i d = 2 5 0 ? a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 ? s operation in this area is limited by r ds(on) ? ? n o t e s : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 1 2 3 4 5 t c' case temperature [ o c] i d' drain current [a] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ? ? n o t e s : 1. z jc ( t ) = 1 . 2 5 ? ? / w m a x . 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j , junction temperature [ o c] r ds(on) , (normalized) drain-source on-resistance
copyright@ semipower electronic technology co., ltd. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss - v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/7 sw226n samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd sw226n samwin 6/7
copyright@ semipower electronic technology co., ltd. all rights reserved. sw226n samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2007.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.03.24 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn 7/7
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